Laser Processing For Nanoscale Size Quantum Wires of AlGaAs/GaAs | ||
| Journal of University of Anbar for Pure Science | ||
| Article 40, Volume 7, Issue 2, August 2013, Pages 1-5 PDF (599.84 K) | ||
| Document Type: Research Paper | ||
| DOI: 10.37652/juaps.2013.84996 | ||
| Authors | ||
| Ahlam H. Jaffer1; Ebtisam M-T. Salman2; Mohammed HamadJassam2 | ||
| 1University of Baghdad - College of Education for pure Science | ||
| 2Baghdad University - College of Education for Pure Sciences | ||
| Abstract | ||
| In this work we investigate and calculate theoretically the variation in a number of optoelectronic properties of AlGaAs/GaAs quantum wire laser, with emphasis on the effect of wire radius on the confinement factor, density of states and gain factor have been calculated. It is found that there exist a critical wire radius (rc) under which the confinement of carriers are very weak. Whereas, above rc the confinement factor and hence the gain increase with increasing the wire radius. | ||
| Keywords | ||
| Quantum wire; Confinement Factor; optical Gain | ||
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