A Theoretical Study of Charge Transport y atAu/ ZnSe and Au/ZnSInterfaces Devices | ||
| Ibn Al-Haitham Journal For Pure And Applied Science | ||
| Article 1, Volume 27, Issue 1, April 2014, Pages 176-187 | ||
| Authors | ||
| Hadi J.M.Al-Agealy; Mohsin A.H.Hassoni; ; Rafah I.Noori; Sarab S.Jheil | ||
| Abstract | ||
| A quantum mechanical description of the dynamics of non-adiabatic electron transfer in metal/semiconductor interfaces can be achieved using simplified models of the system. For this system we can suppose two localized quantum states donor state |D› and acceptor state |A› respectively. Expression of rate constant of electron transfer for metal/semiconductor system derived upon quantum mechanical model and perturbation theory for transition between |├ D〉 and |├ A〉 state when the coupling matrix element coefficient is smaller than0.025eV. The rate of electron transfer for Au/ ZnSe and Au/ZnS interface systemsis evaluated with orientation free energy using aMatlap program. The results of the electron transfer rate constant are calculatedfor our modeas well as with experimental results . | ||
| Keywords | ||
| Charge Transport Theory; metal | ||
|
Statistics Article View: 197 PDF Download: 181 |
||