Study the Effect of Zn Doping in the Structural and Electrical Properties of CdTe Thin Films | ||
| Ibn Al-Haitham Journal For Pure And Applied Science | ||
| Article 1, Volume 27, Issue 1, April 2014, Pages 137-145 | ||
| Authors | ||
| Alia A. M.Shehab; Iqbal S. N.Abd; Hanaa I. Mohammed | ||
| Abstract | ||
| Some of structural,and electrical properties of pure and zinc (Zn) doped cadmium telluride thin films with impurity percentages (0.5, 1, 1.5)%, deposited on hot glass substrate (temperature equals to 423K) of thickness of 300nm and rate deposition of 0.5nm.s-1 by thermal co-evaporation technique under vacuum of (2×10-5)Torr have been investigates. The structural properties for the prepared films were studied before and after. doping process by analysis of the X-ray diffraction, and it appeared that pure and dopant CdTe thin films are polycrystalline and have the cubic structure with preferential orientation in the [111] direction, and the crystal structure of the films were improved due to doping process. From d.c.electrical conductivity in range of (291-495)K, we noticed that there are two activation energies Ea1 and Ea2, and their values decrease withthe..increase.of.Zn.percentages,so..(σd.c.)..of..those..thin.films.increase. From Hall.effect.measurements we showed that the..(σd.c.)..for CdTe thin film is of n-type and converted to p-type when they adopted with Zn, and charge carrier concentration increases with the increase of Zn percentages, so Hall mobility (μH) decreases. | ||
| Keywords | ||
| CdTe; doping with Zn; Structural and Electrical Properties | ||
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