Fabrication based porous silicon photo-detector and improving its spectral responsivity by depositing IZO thin films | ||
| journal of kerbala university | ||
| Article 1, Volume 10, Issue 2, July 2014, Pages 166-172 PDF (0 K) | ||
| Author | ||
| Wisam J. Aziz and Abbas K. Jarhallah | ||
| Abstract | ||
| In this work porous silicon was prepared by electrochemical etching, then IZO thin films were deposited on porous silicon. SEM pictures showed different morphology for all from porous silicon and IZO films deposited on porous silicon. The pores diameter ranges from (0.5-1 μ m). AFM pictures showed the smoothness increased with depositing IZO films. The average roughness is (34.12 nm), (23.4 nm) and the root mean square is approximately (41.88 nm), (28 nm) for porous silicon and IZO film deposited on porous silicon respectively. The results showed increasing of the spectral responsivity with depositing IZO film. Spectral responsivity for photo detractor is about (0.69 A / Watt) then it improved by depositing IZO films and becomes (0.84 A / Watt). | ||
| Keywords | ||
| porous silicon; thin films; ZnO; spectral responsivity | ||
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