Using multilayer silicon nanostructures to enhanced Raman spectroscopy | ||
| Al-Mustansiriyah Journal of Science | ||
| Article 1, Volume 25, Issue 3, September 2014, Pages 117-124 | ||
| Author | ||
| Muna S. Mohammed Jawad | ||
| Abstract | ||
| Porous silicon multi layer has been prepared by photo-chemical etching of n-type silicon wafer at different etching time (10, 20, 30, 40)min with different illumination intensities of (10, 15, 20, 25) mW/cm2. These intensities lead to form porous silicon systems of size in the range (2.85-4.02)nm. SEM images indicated that the surface of the etched layer has pore-like structure with different pore sizes and porosities. The measurement of Raman scattering in porous silicon showed a red shift of the phonon frequency which increased with increasing the etching time and illumination intensity | ||
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