Analytical Study of near Mobility Edge Density of States of Hydrogenated Amorphous Silicon | ||
| Baghdad Science Journal | ||
| Article 1, Volume 11, Issue 3, September 2014, Pages 1243-1249 | ||
| Author | ||
| Abdullah Ibrahim Abbo | ||
| Abstract | ||
| Experimental results for the density of states of hydrogenated amorphous silicon due to Jackson et al near the valence and conduction band edges were analyzed using Levenberg-Marquardt nonlinear fitting method. It is found that the density of states of the valence band and the conduction band can be fitted to a simple power law, with a power index 0.60 near the valence band edge, and 0.55 near the conduction band edge. These results indicate a modest but noticeable deviation from the square root law (power index=0.5) which is found in crystalline semiconductors. Analysis of Jackson et al density of states integral J(E) data over about (1.4 eV) of photon energy range, showed a significant fit to a simple power law with a power index of 2.11 close to that predicted from the density of states fitting results 2.15 | ||
| Keywords | ||
| density of states; mobility edge; nonlinear fitting; amorphous semiconductors | ||
|
Statistics Article View: 182 PDF Download: 76 |
||