'I-V Characteristic and Crystal Structural Of a-As/c-Si Heterojunctions | ||
| Baghdad Science Journal | ||
| Article 1, Volume 11, Issue 2, April 2014, Pages 621-624 | ||
| Authors | ||
| Hanaa I. Mohammed; Hussien K. Al.Lamy; Ramaz A. Al.Ansari; Jenan H. Al.Haidery | ||
| Abstract | ||
| In this research the a-As flims have been prepared by thermal evaporation with thickness 250 nm and rata of deposition r_d(1.04nm/sec) as function to annealing temperature (373 and 473K), from XRD analysis we can see that the degree of crystalline increase with T_a, and I-V characteristic for dark and illumination shows that forward bias current varieties approximately exponentially with voltage bias. Also we found that the quality factor and saturation current dependence on annealing temperatures. | ||
| Keywords | ||
| Amorphous Arsenic; Heterojunction and Annealing temperature | ||
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