Electron Tunnelling Through a Quantum Dot Induced by Temperature Gradient : Weak and Strong Coupling cases | ||
| Journal of Basrah Researches (Sciences) | ||
| Article 1, Volume 40, Issue 1, March 2014, Pages 12-27 PDF (0 K) | ||
| Author | ||
| Musa Kadhim Shamer and JenanMajeed Al-Mukh | ||
| Abstract | ||
| An extended theoretical study for electron transport through a quantum dot embedded between two normal leads is presented; the system under consideration is taken out of equilibrium by induced temperature gradient. We model this quantum dot as single impurity (with two energy levels) to study the electron tunneling process through it. Its occupation numbers and tunneling current are formulated as a function of all important “chemisorption” functions that are related to the tunneling process. Our treatment allows for the tunneling current through the quantum dot to be calculated depending on the spin-dependent occupation numbers. The related relations which are spin-dependent are solved self-consistently to calculate the quantum dot energy levels and their occupation numbers and broadenings as well as the correlation energy.The weak and strong coupling regimes will be studied and discussed extendedly. | ||
| Keywords | ||
| KEYWORDS; Quantum dot; Thermoelectric effects | ||
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