Calculating Silicon Band Structure Under High Pressure | ||
| Rafidain Journal of Science | ||
| Article 11, Volume 25, Issue 4, August 2014, Pages 132-140 PDF (0 K) | ||
| DOI: 10.33899/rjs.2014.88667 | ||
| Authors | ||
| Mumtaz M. Hussien; Adnan M. Al-Sheikh; Seham J. Abdullah | ||
| Abstract | ||
| In this research, the effect of high pressure on silicon band structure has been studied, the tight binding method has been used to calculate the silicon band structure. Following the method used by Cohen to find the matrix elements. The effect of pressure has been introduced to find the matrix element of silicon under different pressure. The results show widening the energy gap and relegating the band up as the pressure increased. | ||
| Keywords | ||
| Calculation of band structure; tight binding method; effect of pressure on silicon band structure | ||
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