Effect Of Environment, Alpha And Beta Particles On Lightly Doped Of SMS Film Germanium Junctions | ||
| Journal of University of Babylon | ||
| Article 1, Volume 21, Issue 4, June 2013, Pages 1412-1430 | ||
| Author | ||
| Faisal A. Mostafa | ||
| Abstract | ||
| The lightly doping of Al and As with germanium material were prepared using thermal co-evaporation technique to deposit SMS film junctions with (0.1wt%) concentration and (800±10nm) thickness. The prepared films were exposed to environment, natural radionuclide (Ra226) emitted alpha and (Sr90) emitted beta particles after heat treatment with various fluences .The (J-V) characteristics refer to high shifting in both forward and reverse biases consisted of three different parts corresponding to different current mechanisms. The first part of (J-V) characteristics correspond to low bias and shows an ohmic behavior which depends on the possible parallel conductance of defects which can be found in the film layers. The second part where V= f-1(J) relationship is exponential, is due to the schottky diode, which results from the contact of semiconductor-metal. The third part is related to bias of relatively higher voltage and is described by linear with ohmic contact. The space charge region is expanded and lead to perturbation in bulk resistivity and its percentages and damage percentages in forward and reverse biases as a result to environment ,increase in bulk resistivity and its percentages, saturation current density, breakdown voltage as result to alpha fluences, As the radiation fluence increases, the concentration of defects, which are introduced by radiation, increase resulting the decrease in current., but it was observed that the bulk resistivity and its percentages, damage percentages decrease after every stages of beta exposure, the damage coefficients (DJ) or (DV) are decrease as the influence of beta particle increase. The film is showed to be very sensitive to environment and radiation, so that its properties change after every dose. | ||
| Keywords | ||
| semiconductor; metal; thin film; doping; Environment; beta particle; alpha particle; thermal evaporation; SMS junction; Radiation | ||
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