Structural and electrical properties of CdO/porous Si heterojunction | ||
| Iraqi Journal of Physics | ||
| Article 1, Volume 10, Issue 18, August 2012, Pages 76-85 | ||
| Authors | ||
| Abdulla M. Ali; Nadir F. Habubi; Raid A. Ismail | ||
| Abstract | ||
| The electrical properties of CdO/porous Si/c-Si heterojunction prepared by deposition of CdO layer on porous silicon synthesized by electrochemical etching were studied. The structural, optical, and electrical properties of CdO (50:50) thin film prepared by rapid thermal oxidation were examined. X-ray diffraction (XRD) results confirmed formation of nanostructured silicon layer the full width half maximum (FWHM) was increased after etching. The dark J-V characteristics of the heterojunction showed strong dependence on etching current density and etching time. The ideality factor and saturation current of the heterojunction were calculated from J-V under forward bias. C-V measurements confirmed that the prepared heterojunctions are abrupt type .The value of built-in-potential as function of etching current density was estimated. | ||
| Keywords | ||
| Porous Si CdO AFM XRD | ||
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