M. Hassan, R., A. Emshary, C., I. Easa, S. (2012). Turn-on Dynamic with Nonlinear Carriers Scattering Rates in InAs/GaAs QD Lasers. Alustath, 20(5), 1621-1633.
R. M. Hassan; C. A. Emshary; S. I. Easa. "Turn-on Dynamic with Nonlinear Carriers Scattering Rates in InAs/GaAs QD Lasers". Alustath, 20, 5, 2012, 1621-1633.
M. Hassan, R., A. Emshary, C., I. Easa, S. (2012). 'Turn-on Dynamic with Nonlinear Carriers Scattering Rates in InAs/GaAs QD Lasers', Alustath, 20(5), pp. 1621-1633.
M. Hassan, R., A. Emshary, C., I. Easa, S. Turn-on Dynamic with Nonlinear Carriers Scattering Rates in InAs/GaAs QD Lasers. Alustath, 2012; 20(5): 1621-1633.

Turn-on Dynamic with Nonlinear Carriers Scattering Rates in InAs/GaAs QD Lasers

Journal of University of Babylon
Article 1, Volume 20, Issue 5, December 2012, Pages 1621-1633
Authors
R. M. Hassan; C. A. Emshary; S. I. Easa
Abstract
Based on the relaxation oscillations theory in semiconductor lasers of Quantum dots (QDs) based on a microscopic approach by K. Lüdge et.al (2008) as a basic model used in this work. We introduce a new expression of nonlinear scattering rates by using the curve fitting functions. We can discuss the influence of different values of the QD density upon the dynamic of laser output in detail of our simulations results. By taking into account, we study the dependence of the carrier-carrier scattering rates on the injection current. We present a theoretical simulation of characteristics and the turn-on dynamics of InAs/GaAs semiconductor QD laser output lasing with pulse wavelength of 1.3μm at room-temperature.
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