Investigation of the Ag-BaF2-GaSb schottky diode current versus voltage, capacitance with voltage and photoelectric measurement | ||
| Basic Education College Magazine For Educational and Humanities Sciences | ||
| Article 1, Volume 0, Issue 0, January 2018, Pages 386-393 | ||
| Authors | ||
| Khalaf I. Khaleel; Subry J. Mohamed; Abdulsamee F. Abdulaziz | ||
| Abstract | ||
| Schottky barrier-type devices are rectifying metal-semiconductor (M-S) structure. This device is used in microelectronics, in solar cell applications, and in chemical sensing [1]. In the Schottky model the amount of band bending is equal to the difference between the work functions, m and s of the metal and semiconductor respectively. | ||
| Keywords | ||
| Investigation of the Ag; BaF; GaSb schottky diode current versus voltage; capacitance with voltage and photoelectric measurement | ||
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