K.abd, I., K.al-Bity, A., A.Esmael, A., A. Bayat, S. (2012). Chemical etching of Si-p-type wafers using KOH. Alustath, 8(4), 10-15.
Intessar K.abd; Abtisam K.al-Bity; Ahmed A.Esmael; Salah A. Bayat. "Chemical etching of Si-p-type wafers using KOH". Alustath, 8, 4, 2012, 10-15.
K.abd, I., K.al-Bity, A., A.Esmael, A., A. Bayat, S. (2012). 'Chemical etching of Si-p-type wafers using KOH', Alustath, 8(4), pp. 10-15.
K.abd, I., K.al-Bity, A., A.Esmael, A., A. Bayat, S. Chemical etching of Si-p-type wafers using KOH. Alustath, 2012; 8(4): 10-15.

Chemical etching of Si-p-type wafers using KOH

Diyala Journal For Pure Science
Article 1, Volume 8, Issue 4, December 2012, Pages 10-15
Authors
Intessar K.abd; Abtisam K.al-Bity; Ahmed A.Esmael; Salah A. Bayat
Abstract
In this paper wet etching was used to etch Si-wafers by chemical solution KOH at different temperature and concentrations, the results showed: - decreasing of the etching rate at higher KOH concentrations producing smooth surface, on the other hand by observing the etching rate as a function of temperature it shows that the etching rate increases with the increase of the etching temperature producing roughness surface.
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