Study Some Of Physical Properties Of Gan/Si(100) For Solar Cell Applications | ||
| Al-Mustansiriyah Journal of Science | ||
| Article 1, Volume 23, Issue 6, September 2012, Pages 183-188 | ||
| Author | ||
| Wisam Jafer Aziz | ||
| Abstract | ||
| In this research the solar cell has been fabricated using GaN as antireflection coating in top surface based on silicon p(100) solar cells. Surface morphology and structural properties of solar cells were investigated using scanning electron microscopy (SEM) and atomic forces microscopy (AFM). Optical reflectance was obtained by using optical reflectometer (Filmetrics (F20)). Photoluminescence (PL) measurement was performed at room temperature. Current density-voltage characterizations were studied under 80 mW/cm2 illumination conditions. GaN antireflection coating was found to be an excellent antireflection coating of incident light and exhibited good light-trapping of spectrum at range (400nm-1000nm). The current density-voltage measurements revealed a good values of short circuit current density 25.2 mA/cm2, open circuit voltage 0.44 and conversation efficiency is 11.43%. | ||
|
Statistics Article View: 29 PDF Download: 15 |
||