The effect of sulfide content(x) on the electrical properties of (ZnSx Se1-x) thin films | ||
| Iraqi Journal of Physics | ||
| Article 1, Volume 10, Issue 18, August 2012, Pages 35-49 | ||
| Authors | ||
| ; Bushra A.Hasan; | ||
| Abstract | ||
| Thin films of ZnSxSe1-x with different sulfide content(x) (0, 0.02, 0.04, 0.06, 0.8, and 0.1), thickness (t) (0.3, 0.5, and 0.7 µm) and annealing temperature (Ta) (R.T 373 and 423K) were fabricated by thermal evaporating under vacuum of 10-5 Toor on glass substrate. The results show that the increasing of sulfide content (x)and annealing temperature lead to decrease the d.c conductivity σDC of and concentration of charge carriers (nH) but increases the activation energy (Ea1,Ea2), while the increasing of t increases σDC and nH but decrease (Ea1,Ea2). The results were explained in different terms. | ||
| Keywords | ||
| ZnS Thin films; Hall Effect; Carriers concentration | ||
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