S. M, A., RafidM.Hannun, , Sahib Ali, M. (2012). The Temperature Effect on Sensitivity of Direct Detection Optical Receiver Incorporating FET- Amplifier. Alustath, 3(2), 115-136.
Abdulgaffar S. M; RafidM.Hannun; Muhannad Sahib Ali. "The Temperature Effect on Sensitivity of Direct Detection Optical Receiver Incorporating FET- Amplifier". Alustath, 3, 2, 2012, 115-136.
S. M, A., RafidM.Hannun, , Sahib Ali, M. (2012). 'The Temperature Effect on Sensitivity of Direct Detection Optical Receiver Incorporating FET- Amplifier', Alustath, 3(2), pp. 115-136.
S. M, A., RafidM.Hannun, , Sahib Ali, M. The Temperature Effect on Sensitivity of Direct Detection Optical Receiver Incorporating FET- Amplifier. Alustath, 2012; 3(2): 115-136.

The Temperature Effect on Sensitivity of Direct Detection Optical Receiver Incorporating FET- Amplifier

Thi-Qar University Journal for Engineering Sciences
Article 1, Volume 3, Issue 2, December 2012, Pages 115-136
Authors
Abdulgaffar S. M; ; Muhannad Sahib Ali
Abstract
It is known that temperature rise boosts the generations of electron-holes pairs in semiconductors and increases their conductivity thatobtained to increase noise.High Electron Mobility Transistors (HEMTs) gives many advantages like low noise and high associated gain
at microwave frequencies.Different shapes and places in containers are done to analyze the temperature effect on chips with other thermal and aerodynamic parameters.
In this paper, the performance of integrated optical receiver consisting of PIN(Positive Intrinsic Negative)-photodiode and HEMT-based transimpedance type amplifier is analyzed upon the effect of temperature variation. Variationof temperatureoccurs when change device
space in one blockcovers.The simulation results show that the sensitivity (Psen) of an optical receiver is minimal in space when temperature effect is low if it is based on well-designed
HEMT.
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