Haider, A. (2009). An interesting experimental observation of O2 pressure effect on the surface roughness of ZnO thin films prepared by PLD technique. Alustath, 2(4), 3-4.
A.J. Haider. "An interesting experimental observation of O2 pressure effect on the surface roughness of ZnO thin films prepared by PLD technique". Alustath, 2, 4, 2009, 3-4.
Haider, A. (2009). 'An interesting experimental observation of O2 pressure effect on the surface roughness of ZnO thin films prepared by PLD technique', Alustath, 2(4), pp. 3-4.
Haider, A. An interesting experimental observation of O2 pressure effect on the surface roughness of ZnO thin films prepared by PLD technique. Alustath, 2009; 2(4): 3-4.

An interesting experimental observation of O2 pressure effect on the surface roughness of ZnO thin films prepared by PLD technique

Iraqi Journal of Applied Physics Letters
Article 1, Volume 2, Issue 4, December 2009, Pages 3-4
Author
A.J. Haider
Abstract
In the foregoing section, we have seen that a high quality semiconductor nanostructure can be fabricated using PLD. A relatively smooth surface and a high crystalline quality, which are appropriate for good optoelectronic devices and applications, were obtained at oxygen pressure of 5x10-2mbar. But at vacuum of 5x10-1 mbar, a very low crystalline and a rough surface were obtained. This surface characterization is important for applications in gas sensors and catalysis.
Keywords
Pulsed laser deposition; ZnO films; roughness; Oxygen ambient
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