Front-Wall Illumination of Spray-Deposited PbS-Si HJ Detector | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 30, Issue 12, July 2012, Pages 2010-2015 PDF (125.98 K) | ||
| DOI: 10.30684/etj.2012.57242 | ||
| Author | ||
| Kadhim A. Hubeatir | ||
| Abstract | ||
| (n-p) PbS-Si HJ detector has been fabricated by pyrolytic spraying of PbS heterolayer onto p-type silicon wafer. PbS-side of illumination in the wavelength range (450-1150 nm) revealed that the quantum efficiency plateau fairly conforms to that of Si homojunction. Significant specific detectivity of about 8.5 x 1011 cm Hz1/2 W-1 has been obtained at 850 nm wavelength. Signal to noise ratio revealed an optimum operation voltage at 2.5 V. | ||
| Keywords | ||
| PbS; Si heterojunction; Photodetector; spray pyrolysis | ||
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