The Effects of Rapid Thermal Annealing on Photoluminescence Properties of Nanostructures Silicon | ||
| Journal of Al-Nahrain University - Science | ||
| Article 1, Volume 15, Issue 2, June 2012, Pages 88-92 | ||
| Authors | ||
| Alwan M. Alwan; Mehdi Q. Zayer | ||
| Abstract | ||
| The photoluminescence spectrums (PL) of as-prepared and rapid thermal annealing RTA of nanostructures silicon have been investigated. p-Type porous silicon (psi) fabricated by electrochemical etching method .The (PL) of as-prepared sample, showed top of photoluminescence (PL) peak centered at about 540.9 nm. After the annealing process of nanostructures silicon in temperature 450°c, 600°c and 750°c at annealing time 15 sec, the (PL) peaks shifted,to 743.99nm, 747.49nm and 757.37 nm rspectively . The intensity of( PL) of annealed samples also shown a conspicuous decrease in intensity Compare with as-prepared sample .The intensity reach to (50%),(39%) and (29%)from its intial value whenthe temperature increase 450, 600°c and 750°c rspectively. This behavour is due to the increase in the average skeleton size | ||
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