Physical Properties of MOS Porous Silicon Detector Fabricated under RTO Method | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 27, Issue 11, August 2009, Pages 2286-2291 PDF (184.36 K) | ||
| DOI: 10.30684/etj.27.11.10 | ||
| Authors | ||
| Alwan M. Alwan; Wafaa K. Khalaf; Narges Z. Abdulzahra | ||
| Abstract | ||
| In this research we studying the sensitivity of a porous silicon photo detector, we found it improved through rapid thermal oxidation processes. Under our optimum preparation conditions, photocurrent can reach about 3408 μA (under power density 100 mW/cm2 tungsten lamp illumination) and dark current is about 300μA (at reverse bias of 5V). | ||
| Keywords | ||
| Photo detector; porous silicon; rapid thermal oxidation | ||
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