Effect of HF Concentration on the PS Structures Prepared by Photoelectrochemical Etching | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 28, Issue 11, May 2010, Pages 2143-2150 PDF (169.8 K) | ||
| DOI: 10.30684/etj.28.11.5 | ||
| Authors | ||
| Yasmeen Z. Dawood; Bassam G. Rasheed; Ali H. AL-Hamdani | ||
| Abstract | ||
| Porous silicon was fabricated at p-n junction wafer by photoelectrochemical (PEC) etching. Silicon wafer with various electrolyte containing different HF concentrations was used to explain PS formation by the reaction at the Si/ electrolyte interface. An investigation of the dependence on HF concentration to formed PS layer was made. The surface morphology of PS layer was study as a function of HF concentration. Pillar like structures are formed at low HF concentration and pores structures are obtained a at higher HF concentration (40%). The etching rate increases with increasing HF concentration causing faster silicon dissolution. Thus the total pillar volume would increase by increasing the HF concentration. | ||
| Keywords | ||
| porous silicon; Photo electrochemical etching; Etching rate; HF concentration | ||
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