Organic Vapors Sensor Based on Dangling Bonds of Porous Silicon | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 25, Issue 8, October 2007, Pages 1023-1027 PDF (200.33 K) | ||
| DOI: 10.30684/etj.25.8.10 | ||
| Author | ||
| Alwan M. Alwan | ||
| Abstract | ||
| In this paper, a porous silicon (PS) layer is investigated as a sensing material to detect the organic vapors with low concentration. The structure of the prepared sensor consists of thin Au /PS/n-Si/Au thick where the PS is etched photo -chemically. The current response of the sensor is governed by the partial depletion of silicon located between two adjacent (porous regions).This depletion is due to the charges trapped on dangling bonds associated with the silicon – porous silicon interface . | ||
| Keywords | ||
| gas sensor; porous silicon | ||
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