Flexible field effect transistor construction techniques, a brief review | ||
| Al-Qadisiyah Journal for Engineering Sciences | ||
| Volume 14, Issue 2, June 2021, Pages 112-116 PDF (792.51 K) | ||
| Document Type: Review Paper | ||
| DOI: 10.30772/qjes.v14i2.753 | ||
| Author | ||
| Haider Sahib Al-Mumen* | ||
| Department of Electrical Engineering, College of Engineering, Babylon University, Babylon, Iraq | ||
| Abstract | ||
| Since the Flexible field effect transistor (F-FET) is the building block of any sophisticated electronic circuit, particularly in the area of wearable electronics and biomedical sensors, it has drawn a lot of attention recently. It is usually fabricated using stretchable semiconductors over polymeric substrates. This paper displays a brief overview of the current fabrication techniques of the F-FET, specifically in terms of the type of substrates and nano semiconductor technologies. As for the applications, flexible devices such as graphene, carbon nanotubes, and nanoparticles seem to be a candidate for future flexible devices due to their excitant electronic and stretchable characteristics. | ||
| Keywords | ||
| Fabrication; Flexible electronics; Semiconductor; Field effect transistor | ||
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