The Structural and Optical Investigation of Grown GaN Film on Porous Silicon Substrate Prepared by PLD

Jabar, Haneen D.; Fakhri, Makram A.; AbdulRazzaq, Mohammed J.; Gopinath, Subash C. B.

doi:10.30684/etj.2022.135733.1281

	The Structural and Optical Investigation of Grown GaN Film on Porous Silicon Substrate Prepared by PLD
Engineering and Technology Journal
Article 1, Volume 41, Issue 2, February 2023, Pages 270-279 PDF (1.41 M)
Document Type: Research Paper
DOI: 10.30684/etj.2022.135733.1281
Authors
Haneen D. Jabar¹; Makram A. Fakhri^* ²; Mohammed J. AbdulRazzaq³; Subash C. B. Gopinath⁴
¹Laser and Optoelectronics Engineering Department, University of Technology-Iraq, Baghdad, Iraq
²Laser and Optoelectronics Engineering Department- University of Technology-Iraq-Baghdad
³Laser and Optoelectronic engineering, University of technology-Iraq, Baghdad, Iraq.
⁴Institute of Nano Electronic Engineering, Universiti Malaysia Perlis, Malaysia
Abstract
The optical properties of a grown gallium nitride (GaN) thin film on a porous silicon (P-Si) substrate was investigated. A Photo-electrochemical etching method was used to synthesize the Psi substrate, and a physical deposition method (pulsed laser deposition) of 1064 nm Q-switch Nd: YAG laser with a vacuum of 10⁻² mbar was used to grow a thin layer of GaN on a prepared P-Si substrate. X-Ray diffraction displayed that GaN film has a high crystalline nature at the (002) plane. The photoluminescence of GaN film exhibited ultraviolet PL with a peak wavelength of 374 nm corresponding to GaN material and red PL with a peak wavelength of 730 nm corresponding to Psi substrate. The absorption coefficient of the P-Si substrate and grown GaN thin film was obtained from the absorption calculation of UV-Vis diffused spectroscopy at ambient temperature in the 230–1100 nm wavelength range. Extinction coefficients, optical energy gap, and refractive index of both the P-Si substrate and the grown GaN thin film have been determined, respectively. The direct optical energy gaps of both the P-Si substrate and grown GaN have also been determined using three methods: Plank’s relation with photoluminescence (PL) spectroscopy, Tauc'relation, and Kubulka-Munk argument with Uv-Vis diffused spectroscopy. It was observed that the optical energy gap of the P-Si substrate was 2.1 eV, while the grown GaN thin film had a multi-optical energy gap of 3.3 eV and 1.6 eV. A good agreement has been obtained between these mentioned methods.
Highlights
Grown GAN thin film had a hexagonal crystalline structure and high-intensity peak at the (002) plane. The absorption spectrum of grown GaN film showed a high absorbance at a UV spectrum of 302.88, 435.26 nm. Three methods relations were used to estimate the optical energy gap of prepared P-Si substrate and grown GaN film. The optical energy gap of the P-Si substrate was 2.1 eV, while the grown GaN thin film had a multi-optical energy gap of 3.3 and 1.6 eV.
Keywords
GaN; P-Si; Etching; Pulsed Laser deposition Optical Properties

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