The Effects of Sputtering Time on Cds Thin Film Solar Cell Deposited by DC Plasma Sputtering Method | ||
| Engineering and Technology Journal | ||
| Article 5, Volume 36, 2C, October 2018, Pages 123-127 PDF (642.01 K) | ||
| DOI: 10.30684/etj.36.2C.5 | ||
| Authors | ||
| Azhar K. Sadkhan* 1; Sabah H. Sabeh* 2; Mohammed K. Khalaf3 | ||
| 1Office of the Vice President for Scientific Affairs and Post Graduate Studies, University of Technology Baghdad, Iraq. | ||
| 2Science Department, University of Technology, Baghdad, Iraq | ||
| 3Applied Science Department, University of Technology, Baghdad, Iraq. | ||
| Abstract | ||
| CdS thin films of different thickness have been prepared by dc sputtering technique on glass slides for a window layer of solar cells. The CdS target were sputtered in different sputtering times (1,1.5,2.5,3) hrs, working pressure (2×10-2) mbar and discharge voltage(2) kV.The structure of the nanoparticles films was investigated of CdS thin films by X-ray diffraction (XRD).The XRD patterns showed that the films were hexagonal (wurtzite) structure having strong preferential orientation along the (002) plane with particle size in the range of (41.04-41.46-41.88-42.53) nm, the peak at (002) preferred orientations of the films are shifted a little from left to right side and films converted to crystalline form. The morphology of the nanoparticles films was studied by atomic force microscopy (AFM) which indicates that the average grain size of CdS thin film is in the range of (41.3-44.2-51.6-50.08) nm. The roughness of films surface increases with increasing the sputtering time, which can be useful for the solar cell. | ||
| Keywords | ||
| Cadmium Sulphide; Plasma; DC sputtering | ||
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