Studying the Effect of Annealing Temperature on some Physical Properties of In2O3 Thin Films | ||
| Engineering and Technology Journal | ||
| Article 5, Volume 36, 2B, December 2018, Pages 124-127 PDF (800.42 K) | ||
| DOI: 10.30684/etj.36.2B.5 | ||
| Authors | ||
| Duaa A. Mohammed* 1; Muslim F. Jawad2 | ||
| 1Applied Science Department, University of Technology, Baghdad, Iraq. | ||
| 2Applied Science Department, University of Technology, Baghdad, Iraq | ||
| Abstract | ||
| In this study, In2O3 thin films were deposited on quartz substrates by pulsed laser deposition technique at room temperature and followed by thermally annealing at 300℃, 400℃ and 500℃ for 1 hour. The optical band gap was found to increase with the annealing temperature from 3.5 to 3.85 eV and the transmittance was observed above 90%. XRD results show that the films are polycrystalline in nature and crystallizes with preferred orientation (222). SEM images show that the films are | ||
| Keywords | ||
| PLD; In2O3 thin films; SEM; Morphological properties | ||
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