Electrical Properties of n-CdSe/Si-p Junction Prepared by Chemical Bath Deposition Technique, from Different Weights of Sodium Selenosulfate and Constant Molarity | ||
| Rafidain Journal of Science | ||
| Article 4, Volume 31, Issue 2, June 2022, Pages 34-39 PDF (657.95 K) | ||
| Document Type: Research Paper | ||
| DOI: 10.33899/rjs.2022.174272 | ||
| Authors | ||
| Sarah Y. Abdulkaleq1; Laith M. Al Taan* 2 | ||
| 1Department of Physical/ Collage of Science/ University of Mosul | ||
| 2Department of Physics/ College of Science/ University of Mosul | ||
| Abstract | ||
| A pn-junction was successfully fabricated by depositing n-type CdSe thin films on p-type Si as a substrate using chemical bath deposition technique (CBD) at 70oC. Time of deposition was 6 hours and the preparing solution was changed every 2 hours during the deposition. Sodium Selenosulfate (with different weights) is the source of Se-2 ions, cadmium nitrate is the source of Cd+2 ions. The (I-V) characteristics for the n-CdSe/p-Si junction show it behaves as a Zener diode in reverse bias, with Zener resistance (3 and 27×103)W. SEM also shows spherical-shape particles with difference grain size (3.8 and 19.8) nm. | ||
| Keywords | ||
| CdSe/Si junction; Zener diode; CBD; pn junction | ||
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