Synthesis of Porous Silicon by Electrochemical Etching for Gas Sensor Application | ||
| Engineering and Technology Journal | ||
| Article 5, Volume 40, Issue 4, April 2022, Pages 555-562 PDF (847.81 K) | ||
| Document Type: Research Paper | ||
| DOI: 10.30684/etj.v40i4.2064 | ||
| Authors | ||
| Duha H. Jwied* 1; Uday M. Nayef1; Falah AH Mutlak2 | ||
| 1Applied Sciences Dept., University of Technology-Iraq, Alsina’a street, 10066 Baghdad, Iraq. | ||
| 2College of Science, University of Baghdad, Baghdad, Iraq | ||
| Abstract | ||
| In the present study, the layers of porous Silicon (PS) have been produced from the p-type Silicon with a (100) orientation using the approach of electrochemical etching. The samples were anodized in a solution of HF concentration 18% and 99% C2H2OH. Samples characteristics of PS were studied by etching time constant (15 min). In addition, the alteration of the current density value into (5, 10,15,20, and 25) mA/ cm2 was also studied. Samples were characterized by nanocrystalline porous Silicon via X-Ray Diffraction (XRD). The AFM (Atomic force microscope) analysis of PS shows the sponge-like structure. Also, a 39.76 nm average diameter was coordinated in the rod-like temperature variation, fabricated from prepared samples on the sensor's sensitivity, recovery time, and response time. The maximal level of the sensitivity has been approximately (20,11)% for porous Silicon of gas NO2 and NH3, respectively. | ||
Highlights | ||
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| Keywords | ||
| porous silicon; Electrochemical etching method; X-Ray Diffraction; Gas Sensor | ||
| References | ||
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