An Analytic Design Approach to Inverse Class-F RF Power Amplifiers | ||
| Engineering and Technology Journal | ||
| Article 9, Volume 38, 2A, February 2020, Pages 211-225 PDF (932.81 K) | ||
| DOI: 10.30684/etj.v38i2A.301 | ||
| Authors | ||
| Firas M. Ali* 1; Mahmuod H. Al-Muifraje2; Thamir R. Saeed3 | ||
| 1Ph.D. Student, Dept. of Electrical Engineering, University of Technology, 30204@uotechnology.edu.iq | ||
| 2Assist. Prof., Dept. of Electrical Engineering, University of Technology, 30207@uotechnology.edu.iq | ||
| 3Professor, Dept. of Electrical Engineering, University of Technology, 50257@uotechnology.edu.iq | ||
| Abstract | ||
| The design of high efficiency inverse class-F (class-F-1) radio frequency (RF) power amplifiers includes extensive measurements to characterize the RF power device by means of the empirical load-pull test setup. This paper presents an alternative characterization approach based on evaluating the load impedances analytically at the desired harmonic frequencies for a high electron mobility transistor (HEMT) in terms of the internal and package elements of the active device. It additionally provides a method for extracting the parasitic elements of the power device as well as determining the optimum load-line resistance using the transistor manufacturer’s large signal model. A new topology for the output matching circuit is also proposed with its synthetic procedure to present the appropriate harmonic load impedances. To verify this methodology, a 900 MHz inverse class-F power amplifier circuit was designed and its performance was tested with the aid of the Keysight ADS software. The simulation results showed an output power of 38 dBm, a power gain of about 13 dB, DC-to-RF efficiency greater than 87%, and an acceptable level of linearity for both GSM and CDMA modulated signals. | ||
| Keywords | ||
| Class-F-1; GaN HEMT; Harmonic Impedances; High Efficiency; RF Power Amplifier | ||
|
Statistics Article View: 243 PDF Download: 367 |
||