T. B. Al-Hammade, H. (2014). Temperature Dependence Of The Energy Gap In Low Dimensional Semiconductor Heterostructures. Alustath, 2(1), 0-0.
Hassan T. B. Al-Hammade. "Temperature Dependence Of The Energy Gap In Low Dimensional Semiconductor Heterostructures". Alustath, 2, 1, 2014, 0-0.
T. B. Al-Hammade, H. (2014). 'Temperature Dependence Of The Energy Gap In Low Dimensional Semiconductor Heterostructures', Alustath, 2(1), pp. 0-0.
T. B. Al-Hammade, H. Temperature Dependence Of The Energy Gap In Low Dimensional Semiconductor Heterostructures. Alustath, 2014; 2(1): 0-0.

Temperature Dependence Of The Energy Gap In Low Dimensional Semiconductor Heterostructures

Almuthanna Journal of Pure Science (MJPS)
Article 1, Volume 2, Issue 1, December 2014, Pages 0-0
Author
Hassan T. B. Al-Hammade
Abstract
The aim of this study is to investigate the temperature
dependence of semiconductor band gaps in low
dimensional semiconductor heterostructures. Low
dimensional semiconductor systems are considered as a
foundation of modern quantum devices. In this study, the
temperature characterization of Ga1-xAIxAs/GaAs quantum
well systems was determined by using Varshni relation.
The band gap of the investigated semiconductors were
observed at deffirent temperatures. The energy bandgap
of semiconductors tends to decrease as the temperature is
increased.
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