Sensitivity of gold nanoparticles doped in porous silicon | ||
Iraqi Journal of Physics | ||
Article 1, Volume 15, Issue 35, December 2017, Pages 1-7 | ||
Authors | ||
Uday Muhsin Nayef; Intisar Mohammed Khudhair | ||
Abstract | ||
In this work gold nanoparticles (AuNPs), were prepared. Chemical method (Seed-Growth) was used to prepare it, then doping AuNPs with porous silicon (PS), used silicon wafer p-type to produce (PS) the processes doping achieved by electrochemical etching, the solution etching consist of HF, ethanol and AuNPs suspension, the result UV-visible absorption for AuNPs suspension showed the single peak located at ~(530 – 521) nm that related to SPR, the single peak is confirmed that the NPs present in the suspension is spherical shape and non-aggregated. X-ray diffraction analysis indicated growth AuNPs with PS. compare the PS layer without AuNPs and with AuNPs doped for electrical properties and sensitivity properties we found AuNPs:PS is more better than PS layer alone that refer to the AuNPs is improve properties PS. | ||
Keywords | ||
gold nanoparticle; Seed; Growth; electrical properties and gas sensor | ||
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