Computer simulation of topological monophase layers in thin flims | ||
| Journal of College of Education | ||
| Article 1, Volume 0, Issue 5, November 2017, Pages 115-126 | ||
| Author | ||
| Abdul halim kh. Ali | ||
| Abstract | ||
| A model corresponding to Ising model for binary alloys was used, which was a square lattice in the form of a thin film, containing 10000 atoms with a concentration of vacancies ( 〖3×10〗^(-3) to 〖10〗^(-4) ), where a monophase layers from A or B atoms has been adopted in an ordered AB thin film .The dynamics of atomic diffusion depends mainly on the vacancies in the thin film. Vacancies had been allowed to jump to the nearest –neighbor sites of monophase layers. Computer simulations showed the phase transformations in thin films and the existence of several mechanisms causing disordering which are : Sustitution point defects, clusters, segregations, microdomains, antiphase order and antiphase boundary . This study focused on the stability of the resulted thin films and its dependance on the temperature and the concentrations of vacancies. The computer simulation results showed that a new ordered thin film AB. | ||
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