Characterization of n-CdO:Mg /p-Si Heterojunction Dependence on Annealing Temperature | ||
| Ibn Al-Haitham Journal For Pure And Applied Science | ||
| Article 1, Volume 29, Issue 3, December 2016, Pages 14-25 | ||
| Author | ||
| Bushra Kadhim Hassoon Al-Maiyaly | ||
| Abstract | ||
| In this research, thin films of CdO: Mg and n-CdO: Mg/ p-Si heterojunction with thickness (500±50) nm have been deposited at R.T (300 K) by thermal evaporation technique. These samples have been annealed at different annealing temperatures (373 and 473) K for one hour. Structural, optical and electrical properties of {CdO: Mg (1%)} films deposited on glass substrate as a function of annealing temperature are studied in detail. The C-V measurement of n-CdO: Mg/ p-Si heterojunction (HJ) at frequency (100 KHz) at different annealing temperatures have shown that these HJ were of abrupt type and the built-in potential (Vbi) increase as the annealing temperature increases. The I-V characteristics of heterojunction prepared under dark case at different annealing temperatures show that the values of ideality factor and potential barrier height increase with the increase of annealing temperature. | ||
| Keywords | ||
| thermal evaporation; Heterojunction; V characteristics; V measurement; Cadmium oxide | ||
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