Theoretical Model of Charge Transport Processes In Metal/ Semiconductor Interfaces | ||
| Diyala Journal For Pure Science | ||
| Article 1, Volume 8, Issue 3, September 2012, Pages 210-224 | ||
| Authors | ||
| ; | ||
| Abstract | ||
| The dynamics of charge transport across metal/semiconductor interface system are studied using a model that derives according to the quantum theory. We suppose continuum level model for donor state |φ_↓ D> and acceptor state |φ_↓ A> . Marcus– Hush semi classical theory adapted to evaluated the reorientation free energy. The rate constant of charge transfer are calculated with assume a continuum level model .Our result for calculation of rate constant of charge transfer show a good agreement with experimental data. the ratio of rate thus agreement with result ≈1 [28] ,indicated the system Au/ GaAs is active media for applied in devices technology according with Au/ InAs system. | ||
| Keywords | ||
| Charge Transport Processes; metal | ||
|
Statistics Article View: 18 |
||