Delay Time Reduction in VCSELs by Optimizing Laser Parameters | ||
| Iraqi Journal for Electrical And Electronic Engineering | ||
| Article 1, Volume 12, Issue 2, December 2016, Pages 146-154 PDF (0 K) | ||
| DOI: 10.33762/eeej.2016.118289 | ||
| Author | ||
| Hisham K. Hisham | ||
| Abstract | ||
| An extensive analysis on reducing the turn-on time delay (ton) in vertical cavity surface emitting lasers (VCSELs) has conducted successfully by considering all the recombination rate coefficients R(N) Besides the R(N) coefficients, the impact of other laser parameters such as, injection current (Iinj), laser cavity volume (V),mirror reflectivity (R), and operating temperature (T) also have investigated. Unlike pervious studies, the temperature dependence (TD) of ton is calculated according to TD of laser parameters instead of well-known Pankove relationship. Results showed that, ton can be reduced by increasing the Iinj and/or the Ni. Meanwhile, the ton increases by increasing the R(N) coefficients. Also, results showed that the ton can be reduced by increasing the R-level or by optimizing laser cavity volume. | ||
| Keywords | ||
| Fast response lasers; optimizing laser model; turn; on time delay; vertical cavity surface emitting laser; wavelength division multiplexing | ||
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