Structural and DC Electrical Properties of (CuI ) Thin Film Prepared by Pulse Laser Deposition | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 34, 4B, April 2016, Pages 512-520 PDF (930.52 K) | ||
| DOI: 10.30684/etj.34.4B.8 | ||
| Authors | ||
| Mohamed K. Dhahir; Asmaa J. Kadhim; Wasan. J. Taher | ||
| Abstract | ||
| In this paper , Copper(I) Iodide (CuI)thin films were prepared by Pulsed Laser Deposition (PLD).The effect of different No. oflaser pulse (200,500 and 800) on the structural and electrical properties were studied.The structure of all CuIfilms istested using X-ray diffraction (XRD) the results were found to be polycrystalline of hexagonal structure with strong crystalline orientation at (111)plane.D.C measurements revealed that the electrical activation energy (Ea) decreases with increasing of pulse shootof thin films. The Hall effect measurements confirmed that the CuI are P-type and the charge carriers concentration (n) were increased with increasing of pulse shoots .Also, it can observe that Hall mobility (H) decreases with the increasing of pulse shoot for films. | ||
| Keywords | ||
| PLDtechnigue; CuI thin film; YAG | ||
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