Morphology and electrical properties of Cu XZn1-XOthin films prepared by PLD technique | ||
| Iraqi Journal of Physics | ||
| Article 1, Volume 14, Issue 29, April 2016, Pages 8-14 | ||
| Authors | ||
| Eman Mizher Nasir; Asmaa N. Mohammed Ali; Kadhim A. Adem | ||
| Abstract | ||
| Cu XZn1-XO films with different x content have been prepared by pulse laser deposition technique at room temperatures (RT) and differentannealing temperatures (373 and 473) K.The effect of x content of Cu (0,0.2,0.4, 0.6, 0.8) wt.% on morphology and electricalproperties of CuXZn1-XO thin films have been studied. AFM measurements showed that the average grain size values for CuXZn1-xO thin films at RT and different annealing temperatures (373,473)K decreases,while the average Roughness values increase with increasing x content. The D.C conductivity for all films increases as the x content increase and decreases with increasing the annealing temperatures. Hall measurements showed that there are two types of conductance (n- type and p-type charge carriers). Also the variation of drift velocity (vd), carrier life time (), and free mean path (l)with different x content and annealing temperatures were measured. | ||
| Keywords | ||
| CuXZn; XO thin films; Morphological properties; electrical properties; PLD technique | ||
|
Statistics Article View: 17 PDF Download: 6 |
||