Characterization of SiC/Si Heterojunction Fabricated by Plasma-Induced Growth of Nanostructured Silicon Carbide Layer on Silicon Surface | ||
| Iraqi Journal of Applied Physics | ||
| Article 1, Volume 12, Issue 2, June 2016, Pages 9-13 | ||
| Author | ||
| Oday A. Hammadi | ||
| Abstract | ||
| In this work, p-type silicon substrates were etched by plasma-induced etching technique to form nano-scale rough surfaces. These surfaces were coated with ultra-fine graphite paste as a source of carbon to form layers of n-type silicon carbide by plasma-induced bonding technique. The plasma used for this purpose was generated by glow discharge of argon at 0.15 mbar and discharge power of 157.5W. The structures and morphology of these structures were introduced by x-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). These tests confirmed the formation of nanostructured SiC layers on the etched Si substrates. Electrical characteristics showed that the formed n-SiC/p-Si anisotype heterojunction has an ideality factor of 0.45 and the built-in potential was measured to be 2.6V. This technique is reasonably efficient, low-cost and reliable to fabricate heterojunctions from nanostructured compound semiconductors on silicon substrates. | ||
| Keywords | ||
| Heterojunction; Plasma; induced bonding; Silicon carbide; Nanostructures | ||
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