K. Abbas, N., L.K.Abass, , Al Maleki, A., Rawi, N. (2004). The effects of raddiation on the optical properties of GERMANIUM SELENIDE semiconductor.. Alustath, 1(2), 326-329.
N. K. Abbas; L.K.Abass; A.K. Al Maleki; N.B.AI Rawi. "The effects of raddiation on the optical properties of GERMANIUM SELENIDE semiconductor.". Alustath, 1, 2, 2004, 326-329.
K. Abbas, N., L.K.Abass, , Al Maleki, A., Rawi, N. (2004). 'The effects of raddiation on the optical properties of GERMANIUM SELENIDE semiconductor.', Alustath, 1(2), pp. 326-329.
K. Abbas, N., L.K.Abass, , Al Maleki, A., Rawi, N. The effects of raddiation on the optical properties of GERMANIUM SELENIDE semiconductor.. Alustath, 2004; 1(2): 326-329.

The effects of raddiation on the optical properties of GERMANIUM SELENIDE semiconductor.

Baghdad Science Journal
Article 1, Volume 1, Issue 2, December 2004, Pages 326-329
Authors
N. K. Abbas; ; A.K. Al Maleki; N.B.AI Rawi
Abstract
Study was made on the optical properties of Ge2oSe8othinfilms prepared by vac-uum evaporation as radiated by (0,34,69) Gy of 13 ray.The optical band gab Eg and tailing band A.Et were studied in the photon energy range ( 1 to 3)eV. The a-Ge20Se8o film was found to be indirect gap with energy gap of (1.965,1.9 , 1.82) eV at radiated by B ray with absorption doses of (0,34,69)Gy respectively.The Ea and AEt of Ge20Se80 films showed adecrease in E8 and an increase in AEt with radiation. This be-havior may be related to structural defects and dangling bonds.
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