A. Ismail, R., F. Jawad, M., A. A. Sultan, O., Yaseen, S. (2004). Evaluation of Laser Doping of Si from MCLT Measurement. Alustath, 1(2), 321-325.
Raid A. Ismail; Mouslm F. Jawad; Omar A. A. Sultan; S. Yaseen. "Evaluation of Laser Doping of Si from MCLT Measurement". Alustath, 1, 2, 2004, 321-325.
A. Ismail, R., F. Jawad, M., A. A. Sultan, O., Yaseen, S. (2004). 'Evaluation of Laser Doping of Si from MCLT Measurement', Alustath, 1(2), pp. 321-325.
A. Ismail, R., F. Jawad, M., A. A. Sultan, O., Yaseen, S. Evaluation of Laser Doping of Si from MCLT Measurement. Alustath, 2004; 1(2): 321-325.

Evaluation of Laser Doping of Si from MCLT Measurement

Baghdad Science Journal
Article 1, Volume 1, Issue 2, December 2004, Pages 321-325
Authors
Raid A. Ismail; Mouslm F. Jawad; Omar A. A. Sultan; S. Yaseen
Abstract
The measurement of minority carrier lifetime (MCLT) ofp-n Si fabricated with aid of laser doping technique was reported. The measurement is achieved by using open circuit voltage decay (OCVD) technique. The experiment data confirms that the value of MCLT and proftle of Voc decay were very sensitive to the doping laser energy.
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