The Effect of Grain Boundaries on Schottky Diode Parameters | ||
| Baghdad Science Journal | ||
| Article 1, Volume 1, Issue 2, December 2004, Pages 258-263 | ||
| Authors | ||
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| Abstract | ||
| The activation energy and optical band gap of different regions (p-type) polysilicon have been measured. Both microscopic studies and current-voltage characteristics of diodes prepared on different surface regions were carried out. Comparison of diodes parameters and microscopic studies indicate that the type of angles between boundaries has a significant effect on diodes parameters while the boundary lengths per unit area has less effect. The mechanism of Al-interaction with grain boundaries and their intersecting points at different temperature were also studies. The X-ray fluorescence spectrometry has been used for detection of diffused A1%. | ||
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