Characterization of the Copper Oxide Thin Films Deposited by Dc Sputtering Technique | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 32, 4B, April 2014, Pages 770-776 PDF (452.33 K) | ||
| DOI: 10.30684/etj.32.4B.17 | ||
| Authors | ||
| Mohammed K. Khalaf; Saba N. Said; Ameen J. Abbas | ||
| Abstract | ||
| Nanocrystalline Copper Oxide films were deposited on glass substrates by plasma dc sputtering. The effected of discharge current on the structural and optical properties of sputtered films were studied .X-ray diffraction peak of Cu2O (111) and Cu4O3 (112) direction was observed at discharge current of (15-30) mA when annealed at 500 0C for 2 h. The optical energy gap for the prepared films is estimated to be in (2.05- 2.3) eV range. It was found that the effect of preparation conditions on thin films thickness strongly depends on the discharge current of argon plasma. | ||
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