Synthesis of Bi and Bi2O3 Polymorphous Structure Using RPLD Method | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 32, 4B, April 2014, Pages 666-673 PDF (640.84 K) | ||
| DOI: 10.30684/etj.32.4B.6 | ||
| Authors | ||
| Evan tariq Al Waisy; Marwa S. Al Wazny | ||
| Abstract | ||
| In the present work, Bismuth and Bismuth trioxide thin films were prepared using reactive pulse laser deposition technique. Different laser fluence was employed ranged from (1.8 J/cm2- 9.8 J/cm2) to investigatedthe physical properties. X –Ray diffraction result show a structure for the prepared films with monoclinic, tetragonal, and nonstoichiometric phases beside bismuth, while the atomic force microscopic result show grain size ranged from (33.48nm -131.6 nm) with different laser fluence. Optical properties result gave an energy gap value in the range of bismuth oxide (1.2-2.9 eV). | ||
| Keywords | ||
| Bismuth; Bismuth Oxide; Reactive Pulse Laser Deposition | ||
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