Preparation and Characterization of Porous Silicon Prepared by Electrochemical Etching | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 32, 4B, April 2014, Pages 623-628 PDF (319.13 K) | ||
| DOI: 10.30684/etj.32.4B.1 | ||
| Authors | ||
| Adawiya J .Haider; Jassim M. Abass; Omar abdulkreem | ||
| Abstract | ||
| Porous silicon (PS) layers were formed on p-type silicon (Si) wafers by using electrochemical etching method. The influence of varying etching time in the anodizing solution ,on structural and optical properties of porous silicon has been investigated. Additionally , the thickness and porosity of the layers were measured using the gravimetric method. The surface morphology was studied by Scanning Electron Microscope (SEM). Finally, the optical properties of porous silicon on silicon substrates were investigated by employing photoluminescence (PL). | ||
| Keywords | ||
| porous silicon; Electrochemical Etching; porosity; Morphological properties; Photoluminescence | ||
|
Statistics Article View: 228 PDF Download: 91 |
||